bc556 ... bc559 bc556 ... bc559 general purpose pnp transistors universal-pnp-transistoren i c = -100 ma h fe ~ 120/200/400 t jmax = 150c v ceo = -30 ...-65 v p tot = 500 mw version 2018-02-01 to-92 (10d3) (1) (2) dimensions - ma?e [mm] typical applications signal processing, switching, amplification commercial grade 1 ) typische anwendungen signalverarbeitung, schalten, verst?rken standardausfhrung 1 ) features general purpose three current gain groups compliant to rohs, reach, conflict minerals 1 ) besonderheiten universell anwendbar drei stromverst?rkungsklassen konform zu rohs, reach, konfliktmineralien 1 ) mechanical data 1 ) mechanische daten 1 ) (1) taped in ammo pack (raster 2.54) (2) on request: in bulk (raster 1.27, suffix bk) 4000 5000 (1) gegurtet in ammo-pack (raster 2.54) (2) auf anfrage: schttgut (raster 1.27, suffix bk) weight approx. 0.18 g gewicht ca. case material ul 94v-0 geh?usematerial solder & assembly conditions 260c/10s l?t- und einbaubedingungen msl n/a current gain groups stromverst?rkungsgruppen recommended complementary npn transistors empfohlene komplement?re npn-transistoren bc556a bc557a bc558a bc559a BC556B bc557b bc558b bc559b bc556c bc557c bc558c bc559c bc546 ... bc549 maximum ratings 2 ) grenzwerte 2 ) bc556 bc557 bc558/559 collector-emitter-voltage C kollektor-emitter-spannung e-b short - v ces 80 v 50 v 30 v collector-emitter-voltage C kollektor-emitter-spannung b open - v ceo 65 v 45 v 30 v emitter-base-voltage C emitter-basis-spannung e open - v cbo 80 v 50 v 30 v emitter-base-voltage C emitter-basis-spannung c open - v ebo 5 v power dissipation C verlustleistung p tot 500 mw 3 ) collector current C kollektorstrom dc - i c 100 ma peak collector current C kollektor-spitzenstrom - i cm 200 ma peak base current C basis-spitzenstrom - i bm 200 ma peak emitter current C emitter-spitzenstrom i em 200 ma junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -55...+150c -55+150c 1 please note the detailed information on our website or at the beginning of the data book bitte beachten sie die detaillierten hinweise auf unserer internetseite bzw. am anfang des datenbuches 2 t a = 25c, unless otherwise specified C t a = 25c, wenn nicht anders angegeben 3 valid, if leads are kept at ambient temperature at a distance of 2 mm from case gltig wenn die anschlussdr?hte in 2 mm abstand vom geh?use auf umgebungstemperatur gehalten werden ? diotec semiconductor ag http://www.diotec.com/ 1 1 6 1 8 9 2 x 2.54 c b e 2 x 1.27 c b e 4.6 0.1 4 . 6 0 . 1 m i n 1 2 . 5 pb e l v w e e e r o h s
bc556 ... bc559 characteristics kennwerte t j = 25c min. typ. max. dc current gain C kollektor-basis-stromverh?ltnis 1 ) - v ce = 5 v - i c = 10 a group a group b group c h fe C C C 90 150 270 C C C - i c = 2 ma group a group b group c h fe 110 200 420 C C C 220 450 800 - i c = 100 ma group a group b group c h fe C C C 120 200 400 C C C collector-emitter cutoff current C kollektor-emitter-reststrom - v ce = 80 v 50 v 30 v b-e short bc556 bc557 bc558 / bc559 - i ces C 0.2 na 15 na - v ce = 80 v 50 v 30 v b-e short t j = 125c bc556 bc557 bc558 / bc559 - i ces C C 4 a collector-emitter saturation voltage C kollektor-emitter-s?ttigungsspg. 1 ) - i c = 10 ma - i b = 0.5 ma - i c = 100 ma - i b = 5 ma - v cesat C C 80 mv 250 mv 300 mv 650 mv base-emitter saturation voltage C basis-emitter-s?ttigungsspannung 1 ) - i c = 10 ma - i b = 0.5 ma - i c = 100 ma - i b = 5 ma - v besat C C 700 mv 900 mv C C base-emitter-voltage C basis-emitter-spannung 1 ) - v ce = 5 v - i c = 2 ma - i c = 10 ma - v be 600 mv C 660 mv C 750 mv 820 mv gain-bandwidth product C transitfrequenz - v ce = 5 v, - i c = 10 ma, f = 100 mhz f t C 150 mhz C collector-base capacitance C kollektor-basis-kapazit?t - v cb = 10 v, i e =i e = 0, f = 1 mhz c cbo C 3.5 pf 6 pf emitter-base capacitance C emitter-basis-kapazit?t - v eb = 0.5 v, i c = i c = 0, f = 1 mhz c ebo C 10 pf C noise figure C rauschzahl - v ce = 5 v, - i c = 200 a, r g = 2 k f = 1 khz, f = 200 hz bc556 ... bc558 bc559 f C C 2 db 1 db 10 db 4 db thermal resistance junction to ambient w?rmewiderstand sperrschicht C umgebung r tha < 200 k/w 2 ) disclaimer: see data book page 2 or website haftungssauschluss: siehe datenbuch seite 2 oder internet 1 tested with pulses t p = 300 s, duty cycle 2% C gemessen mit impulsen t p = 300 s, schaltverh?ltnis 2% 2 valid, if leads are kept at ambient temperature at a distance of 2 mm from case gltig wenn die anschlussdr?hte in 2 mm abstand vom geh?use auf umgebungstemperatur gehalten werden 2 http://www.diotec.com/ ? diotec semiconductor ag
|
